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| Advanced Technical Information Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXTH 28N50Q IXTT 28N50Q VDSS = 500 V = 28 A ID25 RDS(on) = 0.20 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C Maximum Ratings 500 500 30 40 28 112 28 40 1.5 10 400 -55 to +150 150 -55 to +150 V V V V A A A mJ J V/ns W C C C C TO-247 AD (IXTH) (TAB) TO-268 (D3) ( IXTT) G S (TAB) G = Gate D = Drain S = Source TAB = Drain 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 300 Features IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) Rated for unclamped Inductive load switching (UIS) rated Molding epoxies meet UL 94 V-0 flammability classification Advantages Easy to mount Space savings High power density 1.13/10 Nm/lb.in. 6 4 g g Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2.5 4.5 100 TJ = 25C TJ = 125C 25 1 0.20 V V nA A mA VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2003 IXYS All rights reserved DS99038(04/03) IXTH 28N50Q IXTT 28N50Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 16 28 3300 VGS = 0 V, VDS = 25 V, f = 1 MHz 480 125 17 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 2.0 (External), 20 51 12 94 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 20 42 0.31 (TO-247) 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W A A1 A2 b b1 b2 C D E e L L1 P Q R S Dim. Millimeter Min. Max. 4.7 2.2 2.2 1.0 1.65 2.87 .4 20.80 15.75 5.20 19.81 3.55 5.89 4.32 6.15 5.3 2.54 2.6 1.4 2.13 3.12 .8 21.46 16.26 5.72 20.32 4.50 3.65 6.40 5.49 BSC Inches Min. Max. .185 .087 .059 .040 .065 .113 .016 .819 .610 0.205 .780 .140 0.232 .170 242 .209 .102 .098 .055 .084 .123 .031 .845 .640 0.225 .800 .177 .144 0.252 .216 BSC 1 2 3 TO-247 AD (IXFH) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 20 V; ID = 0.5 * ID25, pulse test Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Source-Drain Diode Symbol IS ISM VSD trr QRM Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 28 112 1.5 500 8.0 A A V ns C TO-268 Outline Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXTH 28N50Q IXTT 28N50Q Fig. 1. Output Characteristics @ 25 Deg. C 28 VG S = 10V 7V 70 60 VG S = 10V 8V 7V Fig. 2. Extended Output Characteristics @ 25 deg. C 21 I D - Amperes 6V 50 I D - Amperes 40 30 6V 1 4 7 5V 20 1 0 5V 0 0 1 2 0 V DS - Volts 3 4 5 6 7 0 5 1 0 1 5 20 25 V D S - Volts Fig. 3. Output Characteristics @ 125 Deg. C 28 VG S = 10V 7V 6V Fig. 4. RDS(on) Normalized to ID25 Value vs. Junction Temperature 3.1 2.8 VG S = 10V RD S (on) - Normalized 21 2.5 2.2 1 .9 1 .6 1 .3 1 0.7 I D = 28A I D = 14A I D - Amperes 1 4 5V 7 0 0 2 4 6 8 1 0 1 2 1 4 1 6 0.4 V DS - Volts -50 -25 0 25 50 75 1 00 1 25 1 50 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID25 Value vs. ID 3.4 3 VG S = 10V Fig. 6. Drain Current vs. Case Temperature 30 25 RD S (on) - Normalized 2.2 1 .8 1 .4 T J = 125 C I D - Amperes 2.6 20 1 5 1 0 5 0 T J = 25 C 1 0.6 0 1 4 28 42 56 70 -50 -25 0 25 50 75 1 00 1 25 1 50 I D - Amperes TC - Degrees Centigrade (c) 2003 IXYS All rights reserved IXTH 28N50Q IXTT 28N50Q Fig. 7. Input Admittance 56 49 42 Fig. 8. Transconductance 60 50 T J = -40 C 25 C 125 C g f s - Siemens I D - Amperes 35 28 21 1 4 7 0 3.5 4 4.5 5 5.5 6 6.5 7 T J = -40 C 25 C 125 C 40 30 20 1 0 0 0 1 4 28 42 56 70 84 V G S - Volts I D - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage 84 70 1 0 Fig. 10. Gate Charge VD S = 250V I D = 14A I G = 10mA 8 I S - Amperes VG S - Volts T J = 25 C 56 42 28 1 4 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1 .1 1 .2 T J = 125 C 6 4 2 0 0 20 40 60 80 1 00 V SD - Volts QG - nanoCoulombs Fig. 11. Capacitance 1 0000 f = 1M Hz C iss Fig. 12. Maximum Transient Thermal Resistance 1 Capacitance - p F R J C - (C/W) (th) 30 35 40 1 000 C oss 0.1 C rss 1 00 0 5 1 0 1 5 0.01 V DS - Volts 20 25 1 Pulse Width - milliseconds 1 0 1 00 1 000 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 |
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